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Tue 25 |
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Wed 26 |
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Thu 27 |
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09:00-09:15 |
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Opening - Christopher J. Wilson |
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Chairperson: Christopher Wilson & Paulina Rincon |
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09:15-09:55 |
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INVITED |
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The Metallization Routing to Two Trillion Dollars |
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Anand Murthy,
Lam, USA |
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09:55-10:35 |
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INVITED |
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From stamp to wafer - How complex ALD processes become exponentially harder to control on fab-friendly scale |
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Henrik H. Sønsteby,
University of Oslo, Norway |
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Chairperson: Magali Gregoire & Fabrice Nemouchi |
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11:05-11:45 |
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INVITED |
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Selective and Self-Limited Process Technologies to Enable Ångstrom Scale Integrated Circuits |
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Robert Clark,
TEL, USA |
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11:45-12:25 |
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INVITED |
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ALD and AS-ALD of Metallic Films with New Precursors and Approaches |
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Mikko Ritala,
University of Helsinki, Finland |
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Chairperson: Stefan Schulz & Jan Willem Maes |
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13:25-14:05 |
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INVITED |
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Time for ALD Metals: Enabling the next generation of leading-edge devices |
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Chiyu Zhu,
ASM, Finland |
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14:05-14:45 |
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INVITED |
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In situ study of the synthesis of lamellar metal chalcogenides by alternating deposition of organic & inorganic molecules |
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Hubert Renevier,
Grenoble INP-PhElMa UGA , France |
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Chairperson: Christophe Detavernier & Claudia Wiemer |
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15:15-15:55 |
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INVITED |
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Understanding and predicting interconnect metal deposition and morphology from atomic scale simulations |
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Cara-Lena Nies,
Tyndall National Institute, Ireland |
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15:55-16:35 |
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INVITED |
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Next Generation Microelectronics Devices Enabled by Atomic Layer Deposition |
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Mark Saly,
Applied Materials, USA |
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16:35-17:35 |
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Panel discussion |
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