Materials, Processes & Integration

·     Metallization for advanced interconnects: local interconnects, contacts, metal gates, through silicon vias, power semiconductors 
·     Dielectrics: porous ULK, hybrid materials, pore sealing & stuffing, MOF, patterning, cleaning, restoration, surface functionalization
·     Metal or dielectric liners and diffusion barriers: etch-stop, capping
·     Deposition: PVD, CVD, ALD, ELD, ECD, SAMs, reflow, e-beam
·     Patterning processes and integration: double & triple patterning, advanced etching techniques, Atomic Layer Etching (ALE)
·     Planarization: CMP, slurry, pad, anti-corrosion methods
·     Device integration and novel architectures: local interconnects
·     Silicides and germanides
·     Contacts to III-V materials: CMOS, power, LED, Laser, photonics applications
·     Materials for memories and memristive devices
·     1D and 2D Nanomaterials: graphene, carbon nanotubes, nanowires, nanodots
·     2D & 3D Packaging materials and technologies

Advanced Characterization and Modeling techniques

·     Analytical techniques: defect inspection, X-ray/electron tomography, spectroscopy, microscopy, scanning probe methods, atom probe tomography, correlative methods, metrology
·     Reliability and failure analysis: lifetime extrapolation methodologies, chip-package interaction (CPI)
·     Modeling and simulation of process steps: equipment, interconnect systems, materials properties, nanoscale devices, reliability, all with experimental validations

Applications including nanoscale

·     3D integration: COW, WOW, thinning, bonding, TSV, micro-bumps
·     System-on-chip and system-in-package
·     Power Electronics / IGBTs and materials / GaN & SiC (devices and interconnects)
·     MEMS/NEMS: sensors and actuators
·     Memories devices: MRAM, FeRAM, CBRAM, PCRAM, ReRAM
·     Quantum Devices
·     Biochips: electrodes, microfluidics control, heterogeneous integration