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Tue 25 |
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Wed 26 |
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Thu 27 |
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Chairperson: Paulina Rincon & Nicola Nastasi |
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08:00-08:30 |
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INVITED |
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Wide Bandgap Device Technology for Power Efficient and High Temperature Applications |
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Mikael Östling,
KTH, Sweden |
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08:30-08:50 |
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Nearly-ideal Molybdenum Schottky contacts on AlGaN/GaN heterostructures |
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Simone Milazzo,
University of Catania, Italy |
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08:50-09:10 |
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Contribution of varying accelerating voltage for S/TEM EELS and EDS analysis of AlGaN/GaN based semiconductors |
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Estève Drouillas,
STMicroelectronics, France |
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09:10-09:40 |
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INVITED |
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The role of interface chemistry and crystalline defects on the reliability of 4H-SiC MOSFETs |
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Patrick Fiorenza,
CNR-IMM, Italy |
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Chairperson: Dominique Mangelinck & Christophe Detavernier |
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10:10-10:40 |
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INVITED |
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Eco-Design in ST: a Sustainable journey |
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Cyril Colin-Madan,
STMicroelectronics Crolles, France |
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10:40-11:10 |
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INVITED |
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Assessment of environmental footprint of semiconductor manufacturing industry to promote more sustainable processes |
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Isabelle Servin,
CEA-LETI, France |
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Quantum Devices and 2D Materials |
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Chairperson: Reinhold Dauskardt & Fabrice Nemouchi |
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11:10-11:40 |
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INVITED |
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Secondary Ion Mass Spectrometry Measurements of Non-Planar Materials and Devices |
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Pawel Michalowski,
Łukasiewicz - Institute of Microelectronics and Photonics, Poland |
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11:40-12:10 |
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INVITED |
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Exploring properties and applications of amorphous 2D materials in interconnects using Artificial Intelligence |
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Stephan Roche,
ICREA / ICN2, Spain |
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12:10-12:30 |
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Epitaxial SrTiO3 thin films on silicon for electro-optical quantum devices |
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Andries Boelen,
imec - KU Leuven, Belgium |
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Chairperson: Lin Hou & Gayle Murdoch |
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13:30-14:00 |
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INVITED |
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Hybrid and Fusion Bonding to Enable Advanced Packaging |
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Fumihiro Inoue,
Yokohama National University, Japan |
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14:00-14:30 |
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INVITED |
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Enabling Ultra Low Temperature Hybrid Bonding for D2W Scaling |
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Veronica Strong,
INTEL, Belgium |
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14:30-14:50 |
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Surface Analysis of SiO2 for Die-to-Wafer Hybrid Bonding |
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Yuki Yoshihara,
Yokohama National University, Japan |
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Chairperson: Christophe Detavernier & Dominique Mangelinck |
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14:50-15:20 |
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INVITED |
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Engineering electronic and optical properties of semiconductors by tuning the population of dopant defects: first principles simulations of Chalcogen hyperdoped Si |
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Alberto Debernardi,
IMM Agrate Brianza, Italy |
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15:20-15:40 |
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Analytical evaluation of the interface states on SiO2/4H-SiC n-type MOS Capacitor |
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Marco Zignale,
CNR-IMM, Italy |
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Chairperson: Jan Willem Maes & Magali Gregoire |
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16:10-16:30 |
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Source/drain and silicides for nanosheet device applications |
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Clement Porret,
imec, Belgium |
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16:30-16:50 |
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Nickel silicide phase change transformation upon nanosecond laser annealing |
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Theo Cabaret,
CEA LETI, France |
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16:50-17:10 |
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Crystallographic defects in orthorhombic ScSi / Si(001) contacts |
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Bert Pollefliet,
KU Leuven, Belgium |
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17:10-17:30 |
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A model for the redistribution of Pt during the agglomeration of Ni(Pt)Si thin films |
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Dominique Mangelinck,
CNRS, Aix-Marseille Univ, IM2NP, France |
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19:00-21:30 |
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Conference Dinner |
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