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Posters (22) - Alphabetical order |
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Poster nº
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Author & Title
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Abstract
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| 1 |
Ali Abdelgawad (imec, Belgium)
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Atomic layer etching of nickel aluminide binary intermetallic using a super-cycle sequence based on Hhfac and Al(CH3)3
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| 2 |
Luca Ceccon (imec, Belgium)
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Fluorine doping of barium bismuthate for topological qubits
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| 3 |
Bismiya Fasni Chakkalakunnan (IM2NP, CNRS, Aix Marseille University, France)
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Kinetics of Phase Formation in Ni-Co-Si Ternary system using Bilayer and Alloyed thin films
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| 4 |
Bhavishya Chowrira Poovanna (imec, Belgium)
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E-beam defectivity analysis of metal filled vias to determine yield of EUV lithography processes
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| 5 |
Nicholas Dalla Vedova (STMicroelectronics, Italy)
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WCMP contact slurry influence on the formation of TaNTa barrier residues after metal 1 CuCMP
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| 6 |
Alberto Debernardi (IMM-CNR, unit of Agrate, Italy)
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SixGe(1-x) simulations with hybrid exchange-correlation functionals
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| 7 |
Frederic Fillot (Univ. Grenoble Alpes, CEA, Leti, France)
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Cross correlation of DSC / XRD on phase change thin film used in PCRAM technology
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| 8 |
Sandra Gaertner (Universität Münster - Institute of Materials Physics, Germany)
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Investigation of Phase Formation at the Ni/Sn Interface during the Soldering Process
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| 9 |
Liz Karanja (CEMES-CNRS, France)
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In situ TEM investigation of the deformation mechanism of thick copper metallizations
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| 10 |
Ho-Yun Lee (KU Leuven, Belgium)
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Resistance of advanced interconnects with anisotropic conductors: finite element simulations
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| 11 |
Hanna Luusua (Pibond Oy, Finland)
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Porosity Engineering for Ultra-low k Spin-on Dielectrics
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| 12 |
Akhilesh Kumar Mandal (imec, Belgium)
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Challenges in Ru Damascene Integration for Future Interconnects
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| 13 |
Peter McBreen (Laval University, Canada)
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Carbene Functionalization of 2D-Mo2C, Ru, and Graphene on Ru
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| 14 |
Marie Merlin (CEA, France)
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Exploring the Relationship Between Doping and Ti-Silicidation for Advanced FDSOI Applications
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| 15 |
Punith Kumar Mudigere Krishne Gowda (IMEC, Belgium)
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Electrochemical and Morphological Study of Rhenium Electrodeposition on PVD-Mo Substrates
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| 16 |
Ilaria Presotto (STMicroelectronics S.R.L., Italy)
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Influence of TaN/Ta Barrier Layer Thickness on Wafer Curvature and Via Chain Resistance
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| 18 |
Leslie Schlag (FG Nano TU Ilmenau, Germany)
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Localized sub-25nm Ruthenium and Rhodium Vertical Interconnect Access (VIA) Formation Implementing Airgaps
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| 19 |
Karthick Sekar (IM2NP, AMU, France)
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Impact of Ti interlayer on the formation of Co silicides.
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| 20 |
Shan Song (Fraunhofer Institute for Electronic Nano Systems, Germany)
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Chemical composition and thickness homogeneity of phase change materials based thin films on an industrial-scale wafer
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| 21 |
Chihaya Suzuki (Shibaura Institute of Technology, Japan)
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Fabrication of RF device using Intercalated Multilayer Graphene / Nickel Layered Conductor
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| 22 |
Shotaro Ushitora (Shibaura Institude of Technology, Japan)
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Investigation of Nano-Carbon Cap Formation on Ruthenium by Low Temperature Thermal CVD
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| 23 |
Minghua Zhang (imec, Belgium)
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Reduced compositional fluctuations in epitaxial NiAl layers
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| 22/22 |
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