ORALS
ORALS (17)
Christoph Adelmann (imec, Belgium)
Ru epitaxy on differently oriented sapphire substrates for advanced interconnect applications
Ji Sang Ahn (Seoul National University of Science and Technology, South Korea)
Inherent Area-Selective Deposition of Low-resistivity Molybdenum Carbide Films by Thermal Atomic Layer Deposition
Andries Boelen (imec - KU Leuven, Belgium)
Epitaxial SrTiO3 thin films on silicon for electro-optical quantum devices
Theo Cabaret (CEA LETI, France)
Nickel silicide phase change transformation upon nanosecond laser annealing
Estève Drouillas (STMicroelectronics, France)
Contribution of varying accelerating voltage for S/TEM EELS and EDS analysis of AlGaN/GaN based semiconductors
Senne Fransen (imec, Belgium)
Ultrahigh-density ‘electrolithic’ storage memory proof-of-principle with high-aspect-ratio nanometer-sized holes
Stephane Lariviere (imec, Belgium)
Electrical analysis of damascene patterned metal lines to evaluate patterning yield of EUV 0.33NA lithography
Amanda Mallmann Tonelli (CEA, France)
Optimizing ultrathin HfO2-ZrO2 structures by ALD for BEOL-compatible ferroelectric non-volatile memories
Dominique Mangelinck (CNRS, Aix-Marseille Univ, IM2NP, France)
A model for the redistribution of Pt during the agglomeration of Ni(Pt)Si thin films
Simone Milazzo (University of Catania, Italy)
Nearly-ideal Molybdenum Schottky contacts on AlGaN/GaN heterostructures
Hamid Neggaz (IM2NP,Université Aix Marseille , France)
Study ZnSb Phase Change Material Alloys for Nonvolatile Embedded-Memory Applications
Bert Pollefliet (KU Leuven, Belgium)
Crystallographic defects in orthorhombic ScSi / Si(001) contacts
Clement Porret (imec, Belgium)
Source/drain and silicides for nanosheet device applications
Jean-Philippe Soulie (imec, Belgium)
PtCoO2 delafossite oxide thin films for advanced interconnects
Seppe Van Dyck (Ghent University, Belgium)
Picking the Right TMD is the Key to Controlling Heat In a Phase Change Superlattice
Yuki Yoshihara (Yokohama National University, Japan)
Surface Analysis of SiO2 for Die-to-Wafer Hybrid Bonding
Marco Zignale (CNR-IMM, Italy)
Analytical evaluation of the interface states on SiO2/4H-SiC n-type MOS Capacitor
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