SPEAKERS
KEYNOTE
 
Paul Besser
Entegris
USA
Reinhold H. Dauskardt
Stanford University
USA
Shinichi Ogawa
AIST
Japan
 
INVITED MAM2025
 
Esther Adegoke
University of Limerick
Ireland
Cyril Colin-Madan
STMicroelectronics Crolles
France
Erika Covi
Groningen University
The Netherlands
Alberto Debernardi
IMM Agrate Brianza
Italy
Romain Duru
STMicroelectronics Crolles
France
Patrick Fiorenza
CNR-IMM
Italy
 
Magali Grégoire
STMicroelectronics
France
Patrick Hopkins
University of Virginia
USA
Fumihiro Inoue
Yokohama National University
Japan
Guilhem Larrieu
LAAS-CNRS
France
Pawel Michalowski
Łukasiewicz - Institute of Microelectronics and Photonics
Poland
Cristian Mocuta
SOLEIL synchrotron
France
 
Mikael Östling
KTH
Sweden
Stephan Roche
ICREA / ICN2
Spain
Philippe Rodriguez
CEA-Leti
France
Isabelle Servin
CEA-LETI
France
Veronica Strong
INTEL
Belgium
Kazuyoshi Ueno
Shibaura Institute of Technology
Japan
 
Bowen Zhang
Fraunhofer IKTS Dresden
Germany
 
INVITED WORKSHOP
 
Robert Clark
TEL
USA
Anand Murthy
Lam
USA
Cara-Lena Nies
Tyndall National Institute
Ireland
Hubert Renevier
Grenoble INP-PhElMa UGA
France
Mikko Ritala
University of Helsinki
Finland
Mark Saly
Applied Materials
USA
 
Henrik H. Sønsteby
University of Oslo
Norway
Chiyu Zhu
ASM
Finland
 
KEYNOTE
Paul Besser (Entegris, USA)
Materials Innovations Driving AI
Reinhold H. Dauskardt (Stanford University, USA)
Directed Self-Assembly Exploiting Combustion Synthesis for Next-Generation Nanomanufacturing
Shinichi Ogawa (AIST , Japan)
Materials, Processes, and Characterization: Insights from the Past for Advancing Interconnect Developments
INVITED MAM2025
Esther Adegoke (University of Limerick, Ireland)
Defects in Action: Real-time TEM observation of Nickel Silicide Propagation in Silicon Nanowires
Cyril Colin-Madan (STMicroelectronics Crolles, France)
Eco-Design in ST: a Sustainable journey
Erika Covi (Groningen University, The Netherlands)
Back-end-of-line integration of emerging memory technologies for neuromorphic edge computing
Alberto Debernardi (IMM Agrate Brianza, Italy)
Engineering electronic and optical properties of semiconductors by tuning the population of dopant defects: first principles simulations of Chalcogen hyperdoped Si
Romain Duru (STMicroelectronics Crolles, France)
Photoluminescence Imaging : Shedding Light on the Invisible Defects in Silicon
Patrick Fiorenza (CNR-IMM, Italy)
The role of interface chemistry and crystalline defects on the reliability of 4H-SiC MOSFETs
Magali Grégoire (STMicroelectronics, France)
3D-stacking technologies: remaining challenges of co-integration of thin Ni(Pt)Si film and TiSix contacts.
Patrick Hopkins (University of Virginia, USA)
Electron and phonon thermal conductivity and scattering rates in metal and non-metal thin films and multilayers
Fumihiro Inoue (Yokohama National University, Japan)
Hybrid and Fusion Bonding to Enable Advanced Packaging
Guilhem Larrieu (LAAS-CNRS, France)
Vertically Scaled Gate-All-Around Transistors: From Advanced Nano-Contact Engineering to Device Development
Pawel Michalowski (Łukasiewicz - Institute of Microelectronics and Photonics, Poland)
Secondary Ion Mass Spectrometry Measurements of Non-Planar Materials and Devices
Cristian Mocuta (SOLEIL synchrotron , France)
Thin Films Characterization using Fast Data Acquisition at DiffAbs Beamline (Synchrotron SOLEIL)
Mikael Östling (KTH, Sweden)
Wide Bandgap Device Technology for Power Efficient and High Temperature Applications
Stephan Roche (ICREA / ICN2, Spain)
Exploring properties and applications of amorphous 2D materials in interconnects using Artificial Intelligence
Philippe Rodriguez (CEA-Leti, France)
Enabling III-V and CMOS Synergy: Advances in Contact Technology
Isabelle Servin (CEA-LETI, France)
Assessment of environmental footprint of semiconductor manufacturing industry to promote more sustainable processes
Veronica Strong (INTEL, Belgium)
Enabling Ultra Low Temperature Hybrid Bonding for D2W Scaling
Kazuyoshi Ueno (Shibaura Institute of Technology, Japan)
Graphene Capping for Advanced Interconnects
Bowen Zhang (Fraunhofer IKTS Dresden, Germany)
Multi-scale correlative investigations of failure mechanisms in two-dimensional crystalline materials
INVITED WORKSHOP
Robert Clark (TEL, USA)
Selective and Self-Limited Process Technologies to Enable Ångstrom Scale Integrated Circuits
Anand Murthy (Lam, USA)
The Metallization Routing to Two Trillion Dollars
Cara-Lena Nies (Tyndall National Institute, Ireland)
Understanding and predicting interconnect metal deposition and morphology from atomic scale simulations
Hubert Renevier (Grenoble INP-PhElMa UGA , France)
In situ study of the synthesis of lamellar metal chalcogenides by alternating deposition of organic & inorganic molecules
Mikko Ritala (University of Helsinki, Finland)
ALD and AS-ALD of Metallic Films with New Precursors and Approaches
Mark Saly (Applied Materials, USA)
Next Generation Microelectronics Devices Enabled by Atomic Layer Deposition
Henrik H. Sønsteby (University of Oslo, Norway)
From stamp to wafer - How complex ALD processes become exponentially harder to control on fab-friendly scale
Chiyu Zhu (ASM, Finland)
Time for ALD Metals: Enabling the next generation of leading-edge devices
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