PROGRAM
Tue 19 Wed 20 Thu 21
S10-Silicide/Contacts II
Chairperson: Magali Gregorie (STMicroelectronics, Italy)
08:30-08:50 Investigation of superconductivity in ultrathin PtSi films formed by employing a novel self-alignment process Yao Yao,
Uppsala University, Sweden
08:50-09:10 Influence of annealing schemes on the formation and stability of Ni(Pt)Si thin films: partial, laser, total, and unique anneals Fabriziofranco Morris,
STMicroelectronics, France
09:10-09:30 Effect of Ni on the formation of Co silicides from Co-Ni alloy Karthick Sekar,
IM2NP, Aix-Marseille Université, France
09:30-09:50 ITO and NiOx/ITO off-axis PVD deposition for transparent contact application Nicolas Coudurier,
CEA LETI, France
09:50-10:10 Break
S11-Advanced Characterization & Metrology II
Chairperson: Christopher J. Wilson (Imec, Belgium)
10:10-10:40 INVITED Overview of Inline Metrology Challenges in IC manufacturing environment Delphine Le Cunff,
STMicroelectronics, France
10:40-11:10 INVITED Strain and lattice tilt mapping of GaN on Si nanowires at early stage of coalescence by synchrotron x-ray nano diffraction Patrice Gergaud,
CEA-LETI, France
11:10-11:30 Innovative correlative study based on NBS and EDS analyses for nanoscale characterizations of cobalt silicide film Karen Dabertand,
STMicroelectronics, France
11:30-11:50 Usefulness of low voltage ion milling in the preparation of TEM lamellae in microelectronic industry Jean-Gabriel Mattei,
STMicroelectronics, France
11:50-12:05 Closing remarks
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