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Tue 19 |
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Wed 20 |
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Thu 21 |
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Chairperson: Samuele Sciarrillo (STMicroelectronics, Italy) |
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08:45-09:25 |
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KEYNOTE |
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How STMicroelectronics leverages materials for developing sustainable technologies and Edge AI products |
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Serge Nicoleau,
STMicroelectonics, France |
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Chairperson: Fabrice Nemouchi (CEA-Leti, France) |
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09:25-09:55 |
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INVITED |
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Alternative Metallization: Benefits and Concerns |
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Ivan Ciofi,
IMEC, Belgium |
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09:55-10:15 |
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Atomic Layer Deposition of Cobalt at Low Temperatures |
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Mathias Franz,
Fraunhofer ENAS, Germany |
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10:15-10:35 |
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Development of Novel Selective Barrier Metal for Low Via Resistance in Cu Damascene |
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EunJi Jung,
Samsung Electronics, South Korea |
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Chairperson: Daniel Alquier (Université de Tours, France) |
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10:55-11:25 |
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INVITED |
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Si and Mg ion implantation for doping of GaN grown on silicon |
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Mariane Coig,
CEA-leti, France |
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11:25-11:55 |
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INVITED |
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Low damage Etching processes developments for GaN-based devices patterning |
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Simon Ruel,
CEA-LETI, France |
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11:55-12:15 |
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Forward conduction mechanism at W-based Schottky contacts on AlGaN/GaN heterostructures |
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Simone Milazzo,
University of Catania, Italy |
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12:15-12:35 |
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From sapphire to engineered Si substrates for Ga2O3 heteroepitaxy: theory indications to avoid large lattice misfits |
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Leo Miglio,
University of Milano-Bicocca, Italy |
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S3-Patterning technologies |
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Chairperson: Samuele Sciarrillo (STMicroelectronics, Italy) |
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13:45-14:15 |
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INVITED |
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Direct Metal Etch and Semi-Damascene Integration of Ruthenium: A Game-changer for interconnects |
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Giulio Marti,
IMEC, Belgium |
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14:15-14:45 |
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INVITED |
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Cyclic etching processes for high selectivity and low plasma induced damage |
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François Boulard,
CEA-LETI, France |
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14:45-15:05 |
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Study of metal line patterning strategy for 300 mm superconducting BEOL |
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Thibaut Chêne,
CEA LETI, France |
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S4-Simulations and Modelling techniques |
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Chairperson: Stefan E. Schulz (TU-Chemnitz, Germany) |
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15:25-15:55 |
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INVITED |
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Simulating conditions for the atomic level processing of metals |
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Simon Elliott,
Schrödinger , Ireland |
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15:55-16:25 |
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INVITED |
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Advanced Characterisation and Modelling for Degradation Processes in Copper BEoL Stacks of next-generation Power Devices |
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Andre Clausner,
Fraunhofer IKTS Dresden, Germany |
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16:25-16:45 |
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Carrier profiles measurements on 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy |
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Marco Zignale,
CNR-IMM, Italy |
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S5-Advanced Characterization & Metrology I |
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Chairperson: Dominique Mangelinck (IM2NP, France) |
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16:45-17:15 |
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INVITED |
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Low energy electron microscopy: from basic principles to surface dynamics of semiconductors |
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Frédéric Leroy,
CINaM, France |
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17:15-17:35 |
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Multi-step Siconi pre-clean advantages for Ni(Pt)Si film formation in the frame of advanced FDSOI technology development |
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Magali Gregoire,
STMicroelectronics, France |
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