PROGRAM
Tue 19 Wed 20 Thu 21
S6-Silicide/Contacts I
Chairperson: Zhen Zhang (Uppsala University, Sweden)
08:30-09:00 INVITED Controlling Ni silicide formation by ion implantation Andre Vantomme,
Katholieke Universiteit Leuven, Belgium
09:00-09:20 Formation by nonlinear reactive diffusion of the amorphous Ni silicide upon rapid thermal anneals Dominique Mangelinck,
IM2NP-CNRS-AMU, France
09:20-09:40 Innovative approaches on TiSi-based contact development for µTrench IGBT technology: C54-TiSi2 to TiSi phase transition Davide Fagiani,
STMicroelectronics, Italy
09:40-10:00 Silicidation of Next Generation of FD-SOI Devices: Effect of P Doping Level in epitaxial Si:P Films Helen Grampeix,
CEA LETI, France
10:00-10:20 Thermally Stable Ohmic Contacts on GeSn Layers Philippe Rodriguez,
CEA LETI, France
10:20-10:40 Break
S7-Advances in Packaging
Chairperson: Christopher J. Wilson (Imec, Belgium)
10:40-11:10 INVITED Fundamental issues of wetting and interfacial reactivity in electronic packaging Fiqiri Hodaj,
SIMaP, Grenoble, France
11:10-11:40 INVITED Electroplating of Aluminum using Ionic Liquids for Bonding, Via and RDL applications Silvia Braun,
Fraunhofer ENAS, Germany
11:40-12:00 Chip Package Interaction assessment of WLCSP process steps by 3D FEM Thermo-mechanical simulation Lucrezia Guarino,
STMicroelectronics, Italy
12:00-12:20 Proposal Ultrafast Soldering of the BGA package for Carbon Neutrality Seung-Boo Jung,
Sungkyunkwan University, South Korea
12:20-13:30 Lunch
S8-Memory devices for future applications
Chairperson: Loris Vendrame (Micron, Italy) - TBC
13:30-14:00 INVITED Memory Technology enabling the future computing systems Paolo Fantini,
Micron technology, Italy
14:00-14:30 INVITED Resistive switching memories for spiking neural networks Sabina Spiga,
CNR-IMM, Italy
14:30-14:50 Strategic Superposition: Sb2Te3/TiTe2 Superlattices Possess a Low Thermal Conductivity Contrast, Ideal for PCM Seppe Van Dyck,
Ghent University, Belgium
14:50-15:10 Parylene C as a memristive material for biocompatible memory and synaptic devices Falk Schaller,
Center for Microtechnologies, Germany
15:10-15:30 Break
S9-Metallization II
Chairperson: Christophe Detavernier (University of Gent, Belgium)
15:30-16:00 INVITED Material screening for future diffusion barriers: modelling of binary and ternary metal alloys and detailed experimental analysis of their barrier performance Bettina Wehring,
Fraunhofer IPMS, Germany
16:00-16:20 Electrochemical Deposition of Nanotwinned Cu in Damascene Features Aleksandar Radisic,
IMEC, Belgium
16:20-16:40 Investigation of carbon-cap formation by thermal CVD using ethanol for ruthenium and molybdenum Kazuyoshi Ueno,
Shibaura Institute of Technology, Japan
16:40-18:00 Poster Session
20:00-21:30 Conference dinner - Cormorano Sempione Restaurant - More info
Via Angelo Poliziano, 1, 20154 Milano MI, Italia - Google Maps
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