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| ORALS (23) |
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Thibaut Chêne (CEA LETI, France)
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Study of metal line patterning strategy for 300 mm superconducting BEOL
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Nicolas Coudurier (CEA LETI, France)
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ITO and NiOx/ITO off-axis PVD deposition for transparent contact application
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Karen Dabertand (STMicroelectronics, France)
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Innovative correlative study based on NBS and EDS analyses for nanoscale characterizations of cobalt silicide film
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Davide Fagiani (STMicroelectronics, Italy)
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Innovative approaches on TiSi-based contact development for µTrench IGBT technology: C54-TiSi2 to TiSi phase transition
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Mathias Franz (Fraunhofer ENAS, Germany)
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Atomic Layer Deposition of Cobalt at Low Temperatures
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Helen Grampeix (CEA LETI, France)
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Silicidation of Next Generation of FD-SOI Devices: Effect of P Doping Level in epitaxial Si:P Films
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Magali Gregoire (STMicroelectronics, France)
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Multi-step Siconi pre-clean advantages for Ni(Pt)Si film formation in the frame of advanced FDSOI technology development
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Lucrezia Guarino (STMicroelectronics, Italy)
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Chip Package Interaction assessment of WLCSP process steps by 3D FEM Thermo-mechanical simulation
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EunJi Jung (Samsung Electronics, South Korea)
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Development of Novel Selective Barrier Metal for Low Via Resistance in Cu Damascene
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Seung-Boo Jung (Sungkyunkwan University, South Korea)
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Proposal Ultrafast Soldering of the BGA package for Carbon Neutrality
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Dominique Mangelinck (IM2NP-CNRS-AMU, France)
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Formation by nonlinear reactive diffusion of the amorphous Ni silicide upon rapid thermal anneals
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Jean-Gabriel Mattei (STMicroelectronics, France)
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Usefulness of low voltage ion milling in the preparation of TEM lamellae in microelectronic industry
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Leo Miglio (University of Milano-Bicocca, Italy)
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From sapphire to engineered Si substrates for Ga2O3 heteroepitaxy: theory indications to avoid large lattice misfits
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Simone Milazzo (University of Catania, Italy)
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Forward conduction mechanism at W-based Schottky contacts on AlGaN/GaN heterostructures
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Fabriziofranco Morris (STMicroelectronics, France)
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Influence of annealing schemes on the formation and stability of Ni(Pt)Si thin films: partial, laser, total, and unique anneals
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Aleksandar Radisic (IMEC, Belgium)
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Electrochemical Deposition of Nanotwinned Cu in Damascene Features
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Philippe Rodriguez (CEA LETI, France)
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Thermally Stable Ohmic Contacts on GeSn Layers
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Falk Schaller (Center for Microtechnologies, Germany)
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Parylene C as a memristive material for biocompatible memory and synaptic devices
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Karthick Sekar (IM2NP, Aix-Marseille Université, France)
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Effect of Ni on the formation of Co silicides from Co-Ni alloy
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Kazuyoshi Ueno (Shibaura Institute of Technology, Japan)
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Investigation of carbon-cap formation by thermal CVD using ethanol for ruthenium and molybdenum
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Seppe Van Dyck (Ghent University, Belgium)
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Strategic Superposition: Sb2Te3/TiTe2 Superlattices Possess a Low Thermal Conductivity Contrast, Ideal for PCM
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Yao Yao (Uppsala University, Sweden)
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Investigation of superconductivity in ultrathin PtSi films formed by employing a novel self-alignment process
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Marco Zignale (CNR-IMM, Italy)
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Carrier profiles measurements on 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy
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| 23/23 |
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| 23/23 |
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