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Tue 19 |
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Wed 20 |
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Thu 21 |
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Workshop - WIDE BANDGAP SEMICONDUCTORS AND DEVICES |
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Chairperson: Claudia Wiemer (IMM-CNR, Italy) |
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09:30-10:10 |
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INVITED |
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Novel Trends in Interface Engineering for Wide Band Gap (SiC and GaN) power devices |
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Fabrizio Roccaforte,
CNR-IMM, Italy |
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Chairperson: Samuele Sciarrillo (STMicroelectronics, Italy) |
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11:10-11:50 |
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INVITED |
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GaN devices: Industrial trends and challenges |
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Ferdinando Iucolano,
STMicroelectronics, Italy |
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11:50-12:30 |
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INVITED |
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Silicon Carbide technologies for high demanding power applications |
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Mario Saggio,
STMicroelectronics, Italy |
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Chairperson: Dominique Mangelinck (IM2NP, France) |
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13:45-14:25 |
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INVITED |
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Contact Strategies for SiC Power Devices |
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Daniel Alquier,
Université de Tours, France |
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14:25-15:05 |
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INVITED |
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Characterization and Modelling of C-doped buffers in GaN HEMTs |
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Alessandro Chini,
University of Modena and Reggio Emilia, Italy |
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Chairperson: Simon Ruel (CEA LETI, France) |
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15:25-16:05 |
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INVITED |
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Local substrate removal enabling next generation fully vertical GaN-on-Si power devices |
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Farid Medjdoub,
I.E.M.N – CNRS, France |
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16:05-16:45 |
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INVITED |
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Ohmic Contact Formation and Atomic Layer Processing for Nitride Devices |
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Johannes Heitmann ,
Freiberg University, Germany |
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