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Posters (19) - Alphabetical order |
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Poster nº
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Author & Title
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Abstract
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| 12 |
Alessia Azzopardo (STMicroelectronics, Italy)
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Electrical performances of Tantalum Nitride Thin Film Resistors (TFR) versus N-content modulation
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| 13 |
Matteo Bisogni (STMicroelectronics, Italy)
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Characterization of Molybdenum Oxide: Understanding Growth Kinetics and Molybdenum Consumption for Materials Science Applications
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| 5 |
Federica Capra (STMicroelectronics, Italy)
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Cantilever test structures for stress characterization in multilayer MEMS membranes
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| 17 |
Selene Colombo (STMicroelectronics, Italy)
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Extra pattern defectivity formation due to silicon oxynitride interaction with DUV Photoresist during pGaN gate patterning for HEMT device
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| 1 |
Christophe Detavernier (Ghent University, Belgium)
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In Vacuo XPS Study of Al2O3 Atomic Layer Deposition on GaN
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| 2 |
Frederic Fillot (CEA LETI, France)
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Mechanical Properties and Evidence of Asymmetrical X-Ray Diffraction Peak Broadening in Crystalline Ge2Sb2Te5 Thin Films
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| 19 |
Magali Gregoire (STMicroelectronics, France)
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Influence of the annealing schemes and silicide thickness on the stability of Ni(Pt)Si thin film formed on 300 mm Si(100) wafers
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| 9 |
Daeup Kim (KITECH, South Korea)
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Study on surface modification of recycled carbon fiber to improve interfacial bonding strength with thermoplastic resin
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| 7 |
Antoine Lombrez (CEA/LETI-Minatec, Univ. Grenoble Alpes, CNRS, Grenoble INP, LTM, France)
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Ohmic contact deposition on InGaAs/InP for Si-CMOS compatible HBT fabrication
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| 8 |
Lu Lu (LASSE, France)
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Dopant activation by UV laser annealing to form non-alloy ohmic contact on n+ GaN
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| 18 |
Bruno Moio (STMicroelectronics, Italy)
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Characterization of highly selective dry etching of pGaN over AlGaN
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| 14 |
Tae-Gyun Noh (ESPn Medic Cooperation, South Korea)
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Chloroform-Assisted Selective Metal Deposition on Nanopatterned Polymer
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| 11 |
Chiara Quattrone (STMicroelectronics, Italy)
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Ohmic contact formation for HEMT device: how to avoid AlN formation in an Al/Ti/Si3N4 thin film system
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| 15 |
Eugene Shalyt (KLA, USA)
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Characterization and Metrology Development of a Copper Plating Bath for High Performance Glass Substrate Interconnect
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| 3 |
Chiara Stucchi (STMicroelectronics, Italy)
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TiAl3 for W CVD temperature measurement
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| 10 |
Seppe Van Dyck (Ghent University, Belgium)
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Strategic Superposition: Sb2Te3/TiTe2 Superlattices Possess a Low Thermal Conductivity Contrast, Ideal for PCM
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| 6 |
Silvia Vangelista (STMicroelectronics, Italy)
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Hydrogen role in GaN based semiconductors: ToF SIMS profiles and resistance study
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| 4 |
Vincenzo Vinciguerra (STMicroelectronics, Italy)
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Investigating the Evolution of Warpage Hysteresis Loop to Bifurcation Hysteresis Loop in Cu_ECD/Si large Wafers through Finite Element Analysis
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| 16 |
Laurent Xu (CEA LETI, France)
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Pre-amorphization implantation (PAI) process assessment for GaN contact technologies
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| 19/19 |
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