SPEAKERS
KEYNOTE
 
Serge Nicoleau
STMicroelectonics
France
 
INVITED MAM2024
 
François Boulard
CEA-LETI
France
Silvia Braun
Fraunhofer ENAS
Germany
Ivan Ciofi
IMEC
Belgium
Andre Clausner
Fraunhofer IKTS Dresden
Germany
Mariane Coig
CEA-leti
France
Simon Elliott
Schrödinger
Ireland
 
Paolo Fantini
Micron technology
Italy
Patrice Gergaud
CEA-LETI
France
Fiqiri Hodaj
SIMaP, Grenoble
France
Delphine Le Cunff
STMicroelectronics
France
Frédéric Leroy
CINaM
France
Giulio Marti
IMEC
Belgium
 
Simon Ruel
CEA-LETI
France
Sabina Spiga
CNR-IMM
Italy
Andre Vantomme
Katholieke Universiteit Leuven
Belgium
Bettina Wehring
Fraunhofer IPMS
Germany
 
INVITED WORKSHOP
 
Daniel Alquier
Université de Tours
France
Alessandro Chini
University of Modena and Reggio Emilia
Italy
Johannes Heitmann
Freiberg University
Germany
Ferdinando Iucolano
STMicroelectronics
Italy
Farid Medjdoub
I.E.M.N – CNRS
France
Fabrizio Roccaforte
CNR-IMM
Italy
 
Mario Saggio
STMicroelectronics
Italy
 
KEYNOTE
Serge Nicoleau (STMicroelectonics, France)
How STMicroelectronics leverages materials for developing sustainable technologies and Edge AI products
INVITED MAM2024
François Boulard (CEA-LETI, France)
Cyclic etching processes for high selectivity and low plasma induced damage
Silvia Braun (Fraunhofer ENAS, Germany)
Electroplating of Aluminum using Ionic Liquids for Bonding, Via and RDL applications
Ivan Ciofi (IMEC, Belgium)
Alternative Metallization: Benefits and Concerns
Andre Clausner (Fraunhofer IKTS Dresden, Germany)
Advanced Characterisation and Modelling for Degradation Processes in Copper BEoL Stacks of next-generation Power Devices
Mariane Coig (CEA-leti, France)
Si and Mg ion implantation for doping of GaN grown on silicon
Simon Elliott (Schrödinger , Ireland)
Simulating conditions for the atomic level processing of metals
Paolo Fantini (Micron technology, Italy)
Memory Technology enabling the future computing systems
Patrice Gergaud (CEA-LETI, France)
Strain and lattice tilt mapping of GaN on Si nanowires at early stage of coalescence by synchrotron x-ray nano diffraction
Fiqiri Hodaj (SIMaP, Grenoble, France)
Fundamental issues of wetting and interfacial reactivity in electronic packaging
Delphine Le Cunff (STMicroelectronics, France)
Overview of Inline Metrology Challenges in IC manufacturing environment
Frédéric Leroy (CINaM, France)
Low energy electron microscopy: from basic principles to surface dynamics of semiconductors
Giulio Marti (IMEC, Belgium)
Direct Metal Etch and Semi-Damascene Integration of Ruthenium: A Game-changer for interconnects
Simon Ruel (CEA-LETI, France)
Low damage Etching processes developments for GaN-based devices patterning
Sabina Spiga (CNR-IMM, Italy)
Resistive switching memories for spiking neural networks
Andre Vantomme (Katholieke Universiteit Leuven, Belgium)
Controlling Ni silicide formation by ion implantation
Bettina Wehring (Fraunhofer IPMS, Germany)
Material screening for future diffusion barriers: modelling of binary and ternary metal alloys and detailed experimental analysis of their barrier performance
INVITED WORKSHOP
Daniel Alquier (Université de Tours, France)
Contact Strategies for SiC Power Devices
Alessandro Chini (University of Modena and Reggio Emilia, Italy)
Characterization and Modelling of C-doped buffers in GaN HEMTs
Johannes Heitmann (Freiberg University, Germany)
Ohmic Contact Formation and Atomic Layer Processing for Nitride Devices
Ferdinando Iucolano (STMicroelectronics, Italy)  
GaN devices: Industrial trends and challenges
Farid Medjdoub (I.E.M.N – CNRS, France)
Local substrate removal enabling next generation fully vertical GaN-on-Si power devices
Fabrizio Roccaforte (CNR-IMM, Italy)
Novel Trends in Interface Engineering for Wide Band Gap (SiC and GaN) power devices
Mario Saggio (STMicroelectronics, Italy)
Silicon Carbide technologies for high demanding power applications
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